Semiconductor device with staggered electrodes and increased wiring width

ABSTRACT

A semiconductor device having electrodes formed along a peripheral part thereof in a staggered arrangement of lines including inside-line, central-line and outside-line electrodes. The inside-line electrodes are octagonal or hexagonal shaped with hypotenuses on the central-line electrode and the pellet sides thereof. The central-line electrodes are octagonal or correspondingly hexagonal shaped with hypotenuses on the inside-line and outside-line electrode sides thereof. The maximum width of outside-line electrode wires between the hypotenuses of adjacent inside-line and central-line electrodes depends on the distance between centers of the inside-line and central-line electrodes, minimum lengths of the inside-line and central-line electrodes and electrode protective film, and the necessary minimum conductor interval between the central-line and inside-line electrodes. The position and form of the central-line and inside-line electrodes are determinable based on the given relationship and the necessary value of current.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional application of application Ser. No. 10/440,271,filed May 19, 2003, now U.S. Pat. No. 6,798,077, which is a divisionalapplication of Ser. No. 09/956,123, filed Sep. 20, 2001, now U.S. Pat.No. 6,590,296, which are hereby incorporated by reference in theirentirety for all purposes.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and moreparticularly to a semiconductor device with staggered arrangement inthree lines on the peripheral part of the surface of a semiconductorpellet.

DESCRIPTION OF THE RELATED ART

FIGS. 8 and 9 show the configuration of an electrode with staggeredarrangement on the peripheral part of the surface of a semiconductorpellet in conventional art. FIG. 8 shows inside and outside electrodes402 in two lines with staggered arrangement on the peripheral part of asemiconductor pellet 401. As shown in FIG. 9, an inside-line electrode403 has a square shape and an outside-line electrode 404 has a squareshape or a rectangle shape in which the ratio of the sides is from 1 to2.

However, the pad electrode arranged conventionally has followingproblems:

-   1. Since the wiring connected to the outside-line electrode is    arranged to pass between the adjacent inside-line electrodes and the    width of wiring has to be narrower than the interval between the    inside-line electrodes, the pad electrode cannot be used for a    terminal for a large amount of electric current and a grand    terminal.-   2. In the wire bonding, the wiring mistake is caused in a few cases    by the wrong recognition of the adjacent pad electrode for the    wire-bonding pad electrode.-   3. The neighboring wires contact each other in a few cases in the    wire bonding by arranging the outside-line electrode near the center    of the inside pad electrode.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a novel and improvedsemiconductor device capable of widening the width of wiring for theoutside electrode and embodying the wire bonding smoothly.

To solve the problem described above, the present representativeinvention provides:

A semiconductor device with staggered arrangement in three lines with aninside-line electrode, a central-line electrode and an outside-lineelectrode on the peripheral part of the surface of a semiconductorpellet, wherein the inside-line electrode configures a hexagonalelectrode having a hypotenuse on the central-line electrode side formedto cut vertically on the position at a distance of the sum of theminimum length (R) of the electrode necessary for wire-bonding and theminimum length (F) of the electrode protective film from the center ofthe electrode on the line connecting the center of a rough square shapedelectrode with each side consisted of the sum of the minimum length (R)of the electrode necessary for wire-bonding and the minimum length (F)of the electrode protective film and the center of the adjacentcentral-line electrode, the central-line electrode configures ahexagonal electrode having a hypotenuse on the inside-line electrodeside formed to cut vertically on the position at a distance of the sumof the minimum length (R) of the electrode necessary for wire-bondingand the minimum length (F) of the electrode protective film from thecenter of the electrode on the line connecting the center of a roughsquare shaped electrode with each side consisted of the sum of theminimum length (R) of the electrode necessary for wire-bonding and theminimum length (F) of the electrode protective film and the center ofthe adjacent inside-line electrode; and a semiconductor device whereinthe maximum wiring width of the outside-line electrode wiredintermediately parallel to the hypotenuse of the central-line electrodeand the hypotenuse of the inside-line electrode is calculated with afollowing expression, considering the necessary minimum conductorinterval (I) between the central-line electrode and the inside-lineelectrode;the maximum wiring width=(A ² +B ²)^(1/2)−(R+F+I)×2

Since the present invention can achieve the width of wiring of theoutside-line electrode connected to the internal circuit, which is widerthan the conventional width of wiring, the outside-line electrode can beused as the one for a large amount of electric current, for example, anelectric power supply. Further, since the electrode of the inside-lineelectrode and the electrode of the outside-line electrode are set aparteach other, in recognizing the position of the electrode at the processof wire bonding, the adjacent electrode is not wrongly recognized.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the invention and the concomitantadvantages will be better understood and appreciated by persons skilledin the field to which the invention pertains in view of the followingdescription given in conjunction with the accompanying drawings whichillustrate preferred embodiments. In the drawings:

FIG. 1 is a top plan view of a semiconductor device of first embodiment;

FIG. 2 is a partially enlarged view of an electrode arranged in thesemiconductor device of the first embodiment;

FIG. 3 is a top plan view of a semiconductor device of secondembodiment;

FIG. 4 is a partially enlarged view of an electrode arranged in thesemiconductor device of the second embodiment;

FIG. 5 is a top plan view of a semiconductor device of third embodiment;

FIG. 6 is a partially enlarged view of an electrode arranged in thesemiconductor device of the third embodiment;

FIG. 7 is a sectional view of an electrode arranged in the semiconductordevice of the third embodiment;

FIG. 8 is a top plan view of a conventional semiconductor device;

FIG. 9 is a partially enlarged view of an electrode arranged in theconventional semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, the preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings. Samereference numerals are attached to components having the same functionsin following description and the accompanying drawings and a descriptionthereof is omitted.

First Embodiment

First, the first embodiment will be described in reference to FIGS. 1and 2. It is to be noted that FIG. 1 is a top plan view of thesemiconductor device of this embodiment.

First, as shown in FIG. 1, an outside-line electrode 103, a central-lineelectrode 105 and an inside-line electrode 106 of a semiconductor pellet101 have a staggered arrangement in three lines on the peripheral part102 of a semiconductor pellet 101. The outside-line electrode is formedin a square shape or a rectangle shape in which the ratio of the sidesis from 1 to 2. The central-line electrode configures a hexagonalelectrode having a hypotenuse formed to cut two corners at predetermineddegrees on the inside-line electrode side of the rough square shapedelectrode. The inside-line electrode configures a hexagonal electrodehaving a hypotenuse formed to cut the two corners at predetermineddegrees on the central-line electrode side of the rough square shapedelectrode.

In addition, between the central-line electrode and the inside-lineelectrode, wiring for connecting an internal circuit 110 of thesemiconductor pellet 101 to the outside-line electrode is formedparallel to the hypotenuses of the central-line electrode and theinside-line electrode.

Next, the explanations of the electrodes and the wiring arranged in thesemiconductor device of this embodiment will be provided in reference toFIG. 2. It is to be noted that FIG. 2 is a partially enlarged view ofthe electrode arranged in the semiconductor device of the presentinvention.

First, as shown in FIG. 2, a basic pattern of an inside-line electrode108 is a rough square shaped electrode and the each side is formedparallel or vertically to a pellet side 117. The length of the each sideof the basic rough square shaped electrode is expressed by the sum ofthe minimum radius (R) 111 of the electrode necessary for wire-bondingand the minimum width (F) 112 of the electrode protective film necessaryfor forming the electrode protective film from the center 115 of theelectrode, that is, a distance 113.

In this embodiment, the inside-line electrode 108 configures ahypotenuse formed to cut the rough square shaped electrode in adirection 119 which is perpendicular to a line segment G on the position(H) 118 at a distance of the sum of the minimum radius (R) 111 of theelectrode necessary for wire-bonding and the minimum width (F) 112 ofthe electrode protective film necessary for forming the electrodeprotective film, on the line segment (G) 150 connecting the center 145of the adjacent central-line electrode 107 and the center 115 of theinside-line electrode 108. In this embodiment, two hypotenuses areformed to cut two corners on the central-line electrode side of theinside-line electrode 108.

Since the inside-line electrode 108 has the hypotenuse on the positionat a distance between the center of the basic rough square shapedelectrode and each side of the electrode, the center 115 of theelectrode becomes the center of the inscribing circle in contact witheach side which is horizontal and vertical to the pellet side and withthe hypotenuses.

In this embodiment, the inside-line electrode 108 configures a hexagonalelectrode having two hypotenuses formed to cut the two corners facingthe central-line electrode of the basic rough square shaped electrode atpredetermined degrees and predetermined positions. Two sides 114vertical to the pellet side 117 and two sides 116 horizontal to thepellet side 117 are the four sides of the basic rough square shapedelectrode, and hypotenuses 120 formed to face the central-side electrodeare the remaining two sides.

It is to be noted that a protective film to protect the electrode formedon the inside-line electrode 108 at the minimum width (F) 112 parallelto each side 114, 116 and 120 of the electrode.

On the other hand, the central-line electrode 107 configures a hexagonalelectrode having a hypotenuse formed to cut two corners at predetermineddegrees on the pellet side (the direction of the inside-line electrode)of the basic rough square shaped electrode. It is to be noted that thefollowing description of the center of the electrode represents thepoint located at the same distance from each side of the basic roughsquare shaped electrode.

On the other hand, the basic pattern of the central-line electrode 107is also a rough square shaped electrode, and the each side is formedparallel or vertically to the pellet side. The length of the each sideof the rough square shaped electrode is expressed by the sum of theminimum radius (R) 141 of the electrode necessary for wire-bonding andthe minimum width (F) 142 of the electrode protective film necessary forforming the electrode protective film from the center 145 of theelectrode, that is, a distance 143.

In this embodiment, the central-line electrode 107 has a hypotenuseformed to cut the rough square shaped electrode in a direction 149 whichis perpendicular to a line segment G, on the position (H) 148 at adistance of the sum of the minimum radius (R). 141 of the electrodenecessary for wire-bonding and the minimum radius (F) 142 of theelectrode necessary for forming the electrode protective film, on theline segment (G) 150 connecting the center 115 of the adjacentinside-line electrode 108 and the center 145 of the central-lineelectrode 107. In this embodiment, two hypotenuses are formed to cut twocorners on the inside-line electrode side of the central-line electrode107.

Since the central-line electrode 107 has the hypotenuse on the positionat a distance between the center of the basic rough square shapedelectrode and each side of the electrode, the center 145 of theelectrode becomes the center of the inscribing circle in contact witheach side which is horizontal and vertical to the pellet side and thehypotenuses.

In this embodiment, the central-line electrode 107 configures ahexagonal electrode having a hypotenuse formed to cut the two cornersfacing the inside-line electrode of the basic rough square shapedelectrode at predetermined degrees and predetermined positions. Twosides 144 vertical to the pellet side 117 and two sides 146 horizontalto the pellet side 117 are the four sides of the basic rough squareshaped electrode, and hypotenuses 158 formed to face the inside-sideelectrode are the remaining two sides.

It is to be noted that a protective film to protect the electrode formedon the central-line electrode 107 at the minimum width (F) 142 parallelto each side 144, 146 and 158 of the electrode.

In this embodiment, the central-line electrode 107 and the inside-lineelectrode 108 are the hexagonal electrodes on which the hypotenusesfacing each other are formed.

In addition, the wiring, which connects the internal circuit to theoutside-line electrode, is formed between the central-line electrode andthe inside-line electrode. In this embodiment, the wiring for theoutside-line electrode is formed parallel to the hypotenuses between theinside-line electrode and the central-line electrode.

The maximum width 121 of the wiring for the outside-line electrode,which is formed intermediately parallel to the hypotenuses 120 and 158of the central-line electrode 107 and the inside-line electrode 108, isdecided by the distance between the center of the adjacent centralelectrode 107 and the center of the inside-line electrode 108, which iscalculated from the distance of vertical direction (A) 122 between thecenters of the electrodes and the distance of horizontal direction (B)123 between the centers of the electrodes, the minimum length (R) 111and 141 of the electrode necessary for wire-bonding, the minimum length(F) 112 and 142 of the electrode protective film, and the minimum length(I) 129 of the electric conductor, and is showed by a followingexpression;the maximum wiring width 121 between the hypotenuses=(A ² +B²)^(1/2)−(R+F+I)×2

Also, assuming that the thicknesses of the wirings are roughly identicaleach other, the maximum current of the outside-line electrode 104 willbe proportional to the width 121 of wiring of the hypotenuse.Consequently, the width between the hypotenuses is to be decided by thenecessary value of the current. The interval 122 and 123 between theadjacent central-line electrode 107 and the inside-line electrode 108,and the position and the form of the central-line electrode 107 and theinside-line electrode 108, is to be decided by calculating backward fromthe above-mentioned expression.

Since this embodiment can achieve the width of wiring of theoutside-line electrode connected to the internal circuit, which is widerthan the conventional width of wiring, the outside-line electrode can beused as the one for a large amount of electric current, for example, anelectric power supply. Further, since the electrode of the inside-lineelectrode and the electrode of the outside-line electrode are set aparteach other, in recognizing the position of the electrode at the processof wire bonding, the adjacent electrode is not wrongly recognized.

Second Embodiment

In the embodiment described above, a hexagonal electrode having ahypotenuse formed to cut the two corners facing each other of a basicrough square shaped electrode is introduced as a central electrode andan inside-line electrode. In this embodiment, an octagonal electrodehaving a hypotenuse formed to cut all of the four corners of a basicrough square shaped electrode is introduced as a central electrode andan inside-line electrode.

Next, the second embodiment will be described in reference to FIGS. 3and 4. It is to be noted that FIG. 3 is a top plan view of thesemiconductor device of the present invention.

First, as shown in FIG. 3, an outside-line electrode 203, a central-lineelectrode 205 and an inside-line electrode 206 of a semiconductor pellet201 have a staggered arrangement in three lines on the peripheral part202 of a semiconductor pellet 201. The outside-line electrode is formedin a square shape or a rectangle shape in which the ratio of the sidesis from 1 to 2. The central-line electrode configures an octagonalelectrode having a hypotenuse formed to cut four corners of the roughsquare shaped electrode at predetermined degrees. The inside-lineelectrode configures an octagonal electrode having a hypotenuse formedto cut the four corners of the rough square shaped electrode atpredetermined degrees.

In addition, between the central-line electrode and the inside-lineelectrode, wiring for connecting an internal circuit 210 of thesemiconductor pellet 201 to the outside-line electrode is formedparallel to the hypotenuses of the central-line electrode and theinside-line electrode.

Next, the explanations of the electrodes and the wiring arranged in thesemiconductor device of this embodiment will be provided in reference toFIG. 4. It is to be noted that FIG. 4 is a partially enlarged view ofthe electrode arranged in the semiconductor device of the presentinvention.

First, as shown in FIG. 4, a basic pattern of an inside-line electrode208 is a rough square shaped electrode and the each side is formedparallel or vertically to a pellet side 217. The length of the each sideof the basic rough square shaped electrode is expressed by the sum ofthe minimum radius (R) 211 of the electrode necessary for wire-bondingand the minimum width (F) 212 of the electrode protective film necessaryfor forming the electrode protective film from the center 215 of theelectrode, that is, a distance 213.

In this embodiment, the inside-line electrode 208 has two hypotenusesformed to cut the rough square shaped electrode in a direction 219 whichis perpendicular to a line segment G on the position (H) 218 at adistance of the sum of the minimum radius (R) 211 of the electrodenecessary for wire-bonding and the minimum width (F) 212 of theelectrode protective film necessary for forming the electrode protectivefilm, on the line segment (G) 250 connecting the center 245 of theadjacent central-line electrode 207 and the center 215 of theinside-line electrode 208. In this embodiment, different from the onedescribed above, a hypotenuse on the pellet side cutting two corners inthe direction on a pellet 210 side of the inside-line electrode 208 isformed symmetrically and parallel to the hypotenuse on the central-lineelectrode side.

Since the inside-line electrode 208 has the hypotenuse on the positionat a distance between the center of the basic rough square shapedelectrode and each side of the electrode, the center 215 of theelectrode becomes the center of the inscribing circle in contact witheach side which is horizontal and vertical to the pellet side and withthe hypotenuses.

In this embodiment, the inside-line electrode 208 configures a octagonalelectrode having four hypotenuses formed to cut all the four corners ofthe basic rough square shaped electrode at predetermined degrees andpredetermined positions. Two sides 214 vertical to the pellet side 217and two sides 216 horizontal to the pellet side 217 are the four sidesof the basic rough square shaped electrode, and hypotenuses 220 formedto cut all the four corners are the remaining four sides.

It is to be noted that a protective film to protect the electrode formedon the inside-line electrode 208 at the minimum width (F) 212 parallelto each side of the electrode.

On the other hand, a basic pattern of a central-line electrode 207 is arough square shaped electrode, and the each side is formed parallel orvertically to a pellet side 217. The length of the each side of thebasic rough square shaped electrode is expressed by the sum of theminimum radius (R) 241 of the electrode necessary for wire-bonding andthe minimum width (F) 242 of the electrode protective film necessary forforming the electrode protective film from the center 245 of theelectrode, that is, a distance 243.

In this embodiment, the central-line electrode 207 has two hypotenusesformed to cut the rough square shaped electrode in a direction 249 whichis perpendicular to a line segment G, on the position (H) 248 at adistance of the sum of the minimum radius (R) 241 of the electrodenecessary for wire-bonding and the minimum width (F) 242 of theelectrode protective film necessary for forming the electrode protectivefilm, on the line segment (G) 250 connecting the center 215 of theadjacent inside-line electrode 208 and the center 245 of thecentral-line electrode 207. In this embodiment, different from the onedescribed above, a hypotenuse on the outside-line electrode side cuttingtwo corners in the direction opposite to the pellet 210 side of theinside-line electrode 208, that is, the direction of the outside-lineelectrode 204, is formed symmetrically and parallel to the hypotenuse onthe inside-line electrode side.

Since the central-line electrode 207 has the hypotenuse on the positionat a distance between the center of the basic rough square shapedelectrode and each side of the electrode, the center 245 of theelectrode becomes the center of the inscribing circle in contact witheach side which is horizontal and vertical to the pellet side and thehypotenuses.

In this embodiment, the central-line electrode 207 configures aoctagonal electrode having four hypotenuses formed to cut all the fourcorners of the basic rough square shaped electrode at predetermineddegrees and predetermined positions. Two sides 244 vertical to thepellet side 217 and two sides 246 horizontal to the pellet side 217 arethe four sides of the basic rough square shaped electrode, andhypotenuses 258 formed to cut all the four corners are the remainingfour sides.

It is to be noted that a protective film to protect the electrode formedon the central-line electrode 207 at the minimum width (F) 242 parallelto each side of the electrode.

In this embodiment, the central-line electrode 207 and the inside-lineelectrode 208 are the hexagonal electrodes on which the hypotenusesfacing each other are formed and on which the hypotenuses cutting thetwo corners in the opposite direction are formed at the same time.

In addition, the wiring, which connects the internal circuit to theoutside-line electrode, is formed between the central-line electrode andthe inside-line electrode. In this embodiment, the wiring for theoutside-line electrode is formed parallel to the hypotenuses between theinside-line electrode and the central-line electrode.

The maximum width of wiring 221 for the outside-line electrode, which isformed intermediately parallel to the hypotenuses 220 and 258 of theinside-line electrode 208 and the central-line electrode 207, is decidedby the distance between the center of the adjacent central electrode 207and the center of the inside-line electrode 208, which is calculatedfrom the distance of vertical direction (A) 222 between the centers ofthe electrodes and the distance of horizontal direction (B) 223 betweenthe centers of the electrodes, the minimum length (R) 211 and 241 of theelectrode necessary for wire-bonding, the minimum length (F) 212 and 242of the electrode protective film, and the minimum length (I) 229 of theelectric conductor, and is showed by a following expression;the maximum wiring width 221 between the hypotenuses=(A ² +B²)^(1/2)−(R+F+I)×2.

Also, assuming that the thicknesses of the wirings are roughly identicaleach other, the maximum current of the outside-line electrode 204 willbe proportional to the width 221 of wiring of the hypotenuse.Consequently, the width between the hypotenuses is to be decided by thenecessary value of the current. The interval 223 between the adjacentcentral-line electrode 207 and the inside-line electrode 208, and theposition and form of the central-line electrode 207 and the inside-lineelectrode 208, is to be decided by calculating backward from theabove-mentioned expression.

Since this embodiment can achieve the width of wiring of theoutside-line electrode connected to the internal circuit, which is widerthan the conventional width of wiring, the wiring of the outside-lineelectrode can be used as the one for a large amount of electric current,for example, an electric power supply. Further, since the electrode ofthe inside-line electrode and the electrode of the outside-lineelectrode are set apart each other, in recognizing the position of theelectrode at the process of wire bonding, the adjacent electrode is notwrongly recognized. In addition, in this embodiment, since theinside-line electrode has a hypotenuse formed to cut two corners on theside of the pellet side, the freedom degree of wiring of theoutside-line electrode can be enhanced. Consequently, the short defectat the process of wire bonding is to be decreased gradually. Further,since the central-line electrode has a hypotenuse formed to cut twocorners on the side of the pellet side, the freedom degree of wiring canbe further enhanced.

Third Embodiment

In the embodiment described above, the explanation is provided withregard to the configuration that a hexagonal or an octagonal electrodeis introduced as a central electrode and an inside-line electrode. Inthis embodiment, an electrode with a two-layer structure configuring anoctagonal lower electrode on the lower layer and a square upperelectrode on the upper layer is introduced as a central electrode and aninside-line electrode.

Next, the third embodiment will be described in reference to the FIGS.5, 6 and 7. It is to be noted that FIG. 5 is a top plan view of thesemiconductor device of the present invention.

First, as shown in FIG. 5, an outside-line electrode 303, a central-lineelectrode 305 and an inside-line electrode 306 of a semiconductor pellet301 have a staggered arrangement in three lines on the peripheral part302 of a semiconductor pellet 301. The outside-line electrode is formedin a square shape or a rectangle shape in which the ratio of the sidesis from 1 to 2. In this embodiment, it is to be noted that thecentral-line electrode and the inside-line electrode configure atwo-layer structure configuring an octagonal lower electrode on thelower layer and a square upper electrode on the upper layer.

In addition, between the lower electrode of the central-line electrodeand the lower electrode of the inside-line electrode, wiring forconnecting an internal circuit 310 of the semiconductor pellet 301 tothe outside-line electrode is formed parallel to the hypotenuses of thecentral-line electrode and the inside-line electrode.

Next, the explanations of the electrodes and the wiring arranged in thesemiconductor device of this embodiment will be provided in reference toFIG. 6. It is to be noted that FIG. 6 is a partially enlarged view ofthe electrode arranged in the semiconductor device of the presentinvention.

In this embodiment, different from the one described above, thecentral-line electrode 307 has a two-layer structure consisting of thelower electrode configured of the octagonal electrode having ahypotenuse formed to cut all the four corners of the basic rough squareshaped electrode at predetermined degrees and predetermined positionsand the upper electrode configured of the rough square shaped electrodewith a predetermined size. In addition, the inside-line electrode 308has a two-layer structure consisting of the lower electrode configuredof the octagonal electrode having a hypotenuse formed to cut all thefour corners of the basic rough square shaped electrode at predetermineddegrees and predetermined positions and the upper electrode configuredof the rough square shaped electrode with a predetermined size.

As shown in FIG. 6, a basic pattern of the lower electrode 331 of thecentral-line electrode 307 is a rough square shaped electrode and theeach side is formed parallel or vertically to a pellet side 317. Thelength of the each side of the basic rough square shaped electrode isexpressed by the minimum radius (R) 341 of the electrode necessary forwire bonding from the center 345 of the electrode. It is to be notedthat the lower electrode 331 is covered with the insulating film so thatthe protective film is not formed thereon.

In this embodiment, the central-line electrode 307 has two hypotenusesformed to cut the rough square shaped electrode in a direction 349 whichis perpendicular to a line segment G on the position (H) 348 at adistance of the minimum radius (R) 341 of the electrode necessary forwire-bonding, on the line segment (G) 350 connecting the center 315 ofthe lower electrode 351 of the adjacent inside-line electrode 308 andthe center 345 of the lower electrode 331 of the central-line electrode307.

Since the lower electrode 331 of the central-line electrode 307 has thehypotenuse on the position at a distance between the center of the basicrough square shaped electrode and each side of the electrode, the center345 of the electrode becomes the center of the inscribing circle incontact with each side which is horizontal and vertical to the pelletside and with the hypotenuses.

In this embodiment, the lower electrode 331 of the central-lineelectrode 307 configures a octagonal electrode having four hypotenusesformed to cut all the four corners of the basic rough square shapedelectrode at predetermined degrees and predetermined positions. Twosides 344 vertical to the pellet side 317 and two sides 346 horizontalto the pellet side 317 are the four sides of the basic rough squareshaped electrode, and hypotenuses 352 formed to cut all the four cornersare the remaining four sides.

In addition, in this embodiment, the octagonal lower electrode 331 ofthe central-line electrode 307 is electrically connected to the squareupper electrode 330 via a metal pillar 335 formed in a through hole 334in the insulating layer 333, as shown in FIG. 7. Further, on the upperelectrode 330, the protective film 325 to protect the electrode isformed at the minimum width (F) 342 parallel to each side of theelectrode.

On the other hand, a basic pattern of the lower electrode 351 of theinside-line electrode 308 is a rough square shaped electrode, and theeach side is formed parallel or vertically to the pellet side 317. Thelength of the each side of the basic rough square shaped electrode isexpressed by the minimum radius (R) 311 of the electrode necessary forwire bonding from the center 315 of the electrode. It is to be notedthat the lower electrode 351 is covered with the insulating film so thatthe protective film is not formed thereon.

In this embodiment, the inside-line electrode 308 has two hypotenusesformed to cut the rough square shaped electrode in a direction 319 whichis perpendicular to a line segment G on the position (H) 318 at adistance of the minimum radius (R) 311 of the electrode necessary forwire-bonding, on the line segment (G) 350 connecting the center 345 ofthe lower electrode 331 of the adjacent central-line electrode 307 andthe center 345 of the lower electrode 351 of the inside-line electrode307.

Since the lower electrode 351 of the inside-line electrode 308 has thehypotenuse on the position at a distance between the center of the basicrough square shaped electrode and each side of the electrode, the center315 of the electrode becomes the center of the inscribing circle incontact with each side which is horizontal and vertical to the pelletside and with the hypotenuses.

In this embodiment, the lower electrode 351 of the inside-line electrode308 configures a octagonal electrode having four hypotenuses formed tocut all the four corners of the basic rough square shaped electrode atpredetermined degrees and predetermined positions. Two sides 314vertical to the pellet side 317 and two sides 316 horizontal to thepellet side 317 are the four sides of the basic rough square shapedelectrode, and hypotenuses 320 formed to cut all the four corners arethe remaining four sides.

In addition, in this embodiment, the octagonal lower electrode 351 ofthe inside-line electrode 308 is electrically connected to the squareupper electrode 352 via a metal pillar formed in a through hole in theinsulating layer, similar to the case of the central-line electrode 307.Further, on the upper electrode 352, the protective film to protect theelectrode is formed at the minimum width (F) 312 parallel to each sideof the electrode.

In this embodiment, the lower electrode 331 of the central-lineelectrode 307 and the lower electrode 331 of the inside-line electrode308 are the octagonal electrodes on which the hypotenuses facing eachother are formed and on which the hypotenuses cutting the two corners inthe opposite direction are formed at the same time. Further, the upperelectrode, which is electrically connected to the lower electrode viathe insulating layer, has a rough square shape.

Between the lower electrode 331 of the central-line electrode 307 andthe lower electrode 351 of the inside-line electrode 308, which areconfigured as described above, a wiring 309 for connecting the internalcircuit 310 of the semiconductor pellet 301 to the outside-lineelectrode 308 is formed parallel to the hypotenuses of the central-lineelectrode 307 and the inside-line electrode 308.

The maximum width 321 of the wiring 309 for the outside-line electrode,which is formed intermediately parallel to the hypotenuses 320 and 358of the lower electrode 335 of the central-line electrode 307 and thelower electrode 335 of the inside-line electrode 308, is decided by thedistance between the center of the lower electrode 331 of the centralelectrode 307 and the center of the lower electrode 351 of theinside-line electrode 308, which is calculated from the distance ofvertical direction (A) 322 between the centers of the electrodes and thedistance of horizontal direction (B) 323 between the centers of theelectrodes, the minimum length (R) 311 and 341 of the electrodenecessary for wire-bonding and the minimum length (I) 329 of theelectric conductor, and is showed by a following expression;the maximum wiring width 321 between the hypotenuses=(A ² +B²)^(1/2)−(R+I)×2

In this embodiment, since the octagonal lower electrode is covered withthe insulating film and the protective film is not formed, the lowerelectrode can be formed smaller by the amount in which the protectivefilm is not formed. Consequently, the width of wiring can be widened.

Also, assuming that the thicknesses of the wirings are roughly identicaleach other, the maximum current of the outside-line electrode 304 willbe proportional to the width 321 of wiring of the hypotenuse.Consequently, the width between the hypotenuses is to be decided by thenecessary value of the current. The interval 323 between the adjacentcentral-line electrode 307 and the inside-line electrode 308, and theposition and form of the central-line electrode 307 and the inside-lineelectrode 308, is to be decided by calculating backward from theabove-mentioned expression.

In this embodiment, since the protective film is not formed on the lowerelectrode, the width between the lower electrodes can be further widenedby the amount in which the protective film is not formed. Consequently,the width of wiring of the outside-line electrode connected to theinternal circuit can be widened. In addition, since the inside-lineelectrode has a hypotenuse formed to cut two corners on the side of thepellet side, the degree of freedom of wiring of the outside-lineelectrode can be enhanced. Further, since the central-line electrode hasa hypotenuse formed to cut two corners on the side of the pellet side,the degree of freedom of wiring can be further enhanced.

Since the central-line electrode and the inside-line electrode are notarranged as linearly as they have been conventionally, the wrongrecognition of the adjacent electrode and the short defect with theadjacent wire are to be decreased gradually at the process ofwire-bonding. Further, since all the surfaces of the electrodes areformed in a square shape or a rectangle shape, the position of theelectrode can be smoothly recognized in a short time at the process ofwire bonding.

According to the third embodiment, since the insulating layer is formedon the parts of the lower electrodes of the central-line electrode andthe inside-line electrode, the protective film need not be formed on theelectrode. Consequently, the wiring is set between the lower electrodesof the central-line electrode and the inside-line electrode. The widthof wiring of the outside-line electrode connected to the internalcircuit can be further widened. Consequently, the electrode can be usedas the one for a large amount of electric current, for example, anelectric power supply. Further, since all the surfaces of the electrodesare formed in a square shape or a rectangle shape, the position of theelectrode can be smoothly recognized in a short time at the process ofwire bonding and the productivity of the semiconductor device isincreased.

Although the semiconductor device according to the preferred embodimentof the present invention has been described, the present invention isnot restricted to such examples. It is evident to those skilled in theart that the present invention may be modified or changed within atechnical philosophy thereof and it is understood that naturally thesebelong to the technical philosophy of the present invention.

In the third embodiment, for example, the explanation is provided withregard to the configuration that the central-line electrode and theinside-line electrode have two-layer structures. However, if theuppermost layer of the electrode have a rough square shape, theembodiment can be achieved with a lower electrode having two layers ormore.

In addition, in this embodiment, the explanation is provided with regardto the example that the outside-line electrode is located in the middleof the central-line electrode and the inside-line electrode which areadjacent each other and are arranged at regular intervals. However, theembodiment can be achieved even in the case that the central-lineelectrode and the inside-line electrode are not arranged at regularintervals.

Further, in the first and second embodiment, the explanation is providedwith regard to the configuration that the outside-line electrode isformed in a square shape or a rectangle shape. However, the embodimentcan be achieved even in the case that the outside-line electrode isshaped identically to that of the central-line electrode and theinside-line electrode.

Since the width of wiring of the outside-line electrode connected to theinternal circuit, which is wider than the conventional width of wiring,the outside-line electrode can be used as the one for a large amount ofelectric current, for example, an electric power supply. Further, sincethe electrode of the inside-line electrode and the electrode of theoutside-line electrode are set apart each other, in recognizing theposition of the electrode at the process of wire bonding, the adjacentelectrode is not wrongly recognized.

1. A semiconductor device with staggered arrangement in three lines withan inside-line electrode having a lower electrode and an upper electrodewhich are divided by an insulating film, a central-line electrode havinga lower electrode and an upper electrode divided by another insulatingfilm, and an outside-line electrode on the peripheral part of thesurface of a semiconductor pellet, wherein the lower electrode of theinside-line electrode is configured as an octagonal electrode having anhypotenuse on a central-line electrode side formed to cut vertically ona position at a distance of a minimum length (R) of the electrodenecessary for wire-bonding from a center of the electrode on a lineconnecting a center of a rough square shape of the electrode with eachside consisting of the minimum length (R) of the electrode necessary forwire-bonding and a center of an adjacent central-line electrode, theupper electrode of the inside-line electrode is configured as roughsquare shaped and is connected to the lower electrode of the inside-lineelectrode via a metal pillar formed in the insulating film, the lowerelectrode of the central-line electrode is configured as an octagonalelectrode having an hypotenuse on an inside-line electrode side formedto cut vertically on a position at the distance of the minimum length(R) of the electrode necessary for wire-bonding from a center of theelectrode on a line connecting a center of a rough square shape of theelectrode with each side consisting of the minimum length (R) of theelectrode necessary for wire-bonding and a center of an adjacentinside-line electrode, the upper electrode of the central-line electrodeis configured as rough square shaped and is connected to the lowerelectrode of the central-line electrode via another metal pillar formedin the insulating film, and a maximum wiring width of an outside-lineelectrode wire intermediately parallel to the hypotenuse of thecentral-line electrode and the hypotenuse of the inside-line electrodeis determined based on a following expression, considering a necessaryminimum conductor interval (I) between the central-line electrode andthe inside-line electrode:the maximum wiring width=(A ² +B ²)^(1/2)−(R+l)×2, wherein A is adistance between the center of the lower electrode of the inside-lineelectrode and the center of the lower electrode of the central-lineelectrode in a direction perpendicular to the inside central and outsidelines, and wherein B is a distance between the center of the lowerelectrode of the inside-line electrode and the center of the lowerelectrode of the central-line electrode in a direction parallel to theinside, central and outside lines.
 2. The semiconductor device accordingto claim 1, wherein the lower electrodes of the central-line electrodeand the inside-line electrode have two layers or more.
 3. Thesemiconductor device according to claim 1, wherein the central-lineelectrode and the inside-line electrode are arranged at regularintervals.
 4. The semiconductor device according to claim 1, wherein thecentral-line electrode and the inside-line electrode are each arrangedat arbitrary intervals.
 5. The semiconductor device according to claim1, wherein the outside-line electrode is square or rectangular shaped,and a ratio of length of sides of the outside-line electrode is from 1to 2.